Dynamically Induced Excitonic Instability in Pumped Dirac Materials

Driven and non-equilibrium quantum states of matter have attracted growing interest in both theoretical and experimental studies in condensed matter physics. Recent progress in realizing transient collective states in driven or pumped Dirac materials (DMs) is reviewed herein. In particular, the focus is on optically pumped DMs which are a promising platform for transient excitonic instabilities. Optical pumping combined with the linear (Dirac) dispersion of the electronic spectrum offers a knob for tuning the effective interaction between the photoexcited electrons and holes, and thus provides a way of reducing the critical coupling for excitonic instability. As a result, a transient excitonic condensate could be achieved in a pumped DM while it is not feasible in equilibrium. A unifying theoretical framework is provided for describing transient collective states in 2D and 3D DMs. The experimental signatures are described and numerical estimates of the size of the dynamically induced excitonic gaps and the values of the critical temperatures for several specific systems, are summarized. In addition, general guidelines for identifying promising material candidates are discussed. Finally, comments are provided regarding recent experimental efforts in realizing transient excitonic condensate in pumped DMs, and outstanding issues and possible future directions are outlined.     

Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Performance of a CW pumped Nd:YVO4 amplifier with kHz pulses

Until recently, simple and reliable high repetition-rate laser sources with nanosecond pulses much shorter than from conventional A-O Q-switch lasers were not available. However over the past 2 years we have developed such lasers based on proprietary fast E-O switching technology, which allows designs delivering 1 ns pulses and subnanosecond jitter for good synchronisation. The technology provides pulses with multi-kW peak power and repetition-rates to >100 kHz.Most recently, the performance of these short pulse lasers has been developed further by implementing oscillator/amplifier (master oscillator and power amplifier, MOPA) technology which increases the output to >1 W average power. Here we report on a simple model that has been used to predict the performance of the CW pumped Nd:YVO₄ amplifier used in the MOPA laser. The model is based on the well-known expressions for the saturated gain applying to laser pulses, but more usually applied to pulse-excited amplifiers. The model is shown to allow a good interpretation of the amplifier behaviour for kHz pulses and to be a useful tool for predicting the performance of the MOPA laser.     

抽运激光在光靶中的局域及其对X射线激光特性的影响

新型X射线靶设计为:由SiO2和TiO2组成具有12个周期的一维光子晶体,在它的中间嵌入光靶材料层作为缺陷层,SiO2,TiO2和光靶层的光学厚度分别为λ4、λ4和λ2,λ为抽运激光波长.与普通平板光靶相比,当抽运光垂直照射到这种光靶时,靶层内部的光强将提高2个数量级,所以抽运激光的阈值强度将降低2个数量级,这有利于X射线激光的小型化.在同样的抽运激光照射下,X射线激光的强度将提高4个数量级,转换效率也将提高约4个数量级.由于平均电离度随抽运激光强度的提高而提高,所以采用这种光靶有利于使X射线激光向短波长推进. 关键词： X射线激光 光子晶体 光波局域     

氙灯泵浦的NYAB晶体调Q激光运转特性及实验研究

首次报道了氙灯泵浦的自激活自倍频NYAB复合功能晶体的BDN染料片调Q运转,获得了自倍频绿光单脉冲.测量了不同L和T_o情况下的绿光脉冲的能量、脉宽和峰值功率.文中还从理论上推导了自激活自倍频晶体调Q激光器的方程组.数值求解方程组,所得的理论数据与实验结果很好地相符.最后,讨论了进一步提高绿光脉冲峰值功率的途径.     

LD泵浦Nd：BGO晶体的自调Q激光器

首次实现了ＬＫ泵浦Ｎｄ∶ＢＧＯ固体激光器的１．０６４μｍ的激光输出，泵浦阈值功率为２５ｍＷ，在连续运转状态下得到最大为４０ｍＷ的ＴＥＭ００模输出，光－光效率为１３．３％，根据法拉第磁光效庆理论，了ＬＤ泵浦Ｎｄ∶ＢＧＯ自调Ｑ激光器的各种参数，并研制成该激光器，在该器件中，作为损耗调制元件的磁光调制器就是绕有线圈的Ｎｄ∶ＢＧＯ晶体本身，实验在重复率为１ＫＨｚ的条件下得到了ＦＷＨＭ为１００ｎｓ的稳定脉冲     

Quantized charge transport in adiabatic pumping by a driven double δ-barrier

We investigate the condition that the charge carried by quantum parametric pumping per cycle is quantized in units of the electron charge e and the role of adiabaticity in charge quantization. Using a driven double-δ-potential model and a Floquet scattering approach, it is found that the quantization phenomenon occurs only at very low frequencies of the oscillating potential and adiabaticity of the potential modulation is crucial for quantization.     

固体激光器的灯泵浦和二极管泵浦方式比较

对固体激光器的灯泵浦和二极管泵浦方式进行了比较,详细分析了不同类型的固体激光器所适用的泵浦方式.指出二极管泵浦固体激光器是今后固体激光器的发展趋势.     

激光二极管泵浦单频连续工作的Nd：YAG激光器

在国内首次报道了激光二极管泵浦单频连续工作的Ｎｄ：ＹＡＧ激光器，采用扭摆模腔技术方法，在８０８ｎｍ激光二极管连续泵浦下，取得１０６４ｎｍ连续单频工作，输出功率５５ｍＷ的结果，泵浦阈值２７６ｍＷ，斜率效率２３％，线宽小于２５ＭＨｚ（受仪器测量精度限制）。